| PART |
Description |
Maker |
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| IXTT30N50P IXTV30N50PS IXTH30N50P IXTQ30N50P |
N-Channel Enhancement Mode Avalanche Rated
MOSFET N-CH 500V 30A TO-3P
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| BSP171P Q67041-S4019 |
High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated)
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IRFF210 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
Intersil Corporation
|
| IPD400N06NG IPD400N06NG08 |
OptiMOS? Power-Transistor Features N-channel enhancement - normal level Avalanche rated
OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated
|
Infineon Technologies AG
|
| SFF44N50Z SFF44N50M |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| SFF44N50S1 SFF44N50S2 |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| IXTX32P60P |
P-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTH20P50P IXTT20P50P |
P-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
